RGW40TS65DGC11
IGBT TRNCH FIELD 650V 40A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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The Rohm Semiconductor RGW40TS65DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This device features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 40 A, with a pulsed capability of 80 A. Its low on-state voltage (Vce(on)) of 1.9 V at 15 V gate-emitter voltage and 20 A collector current, coupled with a maximum power dissipation of 136 W, ensures efficient operation. The RGW40TS65DGC11 exhibits typical switching times of 33 ns turn-on and 76 ns turn-off at 25°C, with associated switching energies of 330 µJ (on) and 300 µJ (off) under specified test conditions. Operating across a temperature range of -40°C to 175°C, this IGBT is housed in a TO-247N package, suitable for through-hole mounting. It finds application in power supply, motor control, and industrial power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 20A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 33ns/76ns |
| Switching Energy | 330µJ (on), 300µJ (off) |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Gate Charge | 59 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 136 W |
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