RGW00TS65GC11
IGBT TRNCH FIELD 650V 96A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor RGW00TS65GC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 96 A, with a pulsed capability of up to 200 A. The Vce(on) is specified at a maximum of 1.9 V at 15 V gate-emitter voltage and 50 A collector current. With a maximum power dissipation of 254 W, the RGW00TS65GC11 operates across an extended temperature range of -40°C to 175°C. Key switching characteristics include a turn-on delay of 52 ns and turn-off delay of 180 ns at 25°C, with corresponding switching energies of 1.18 mJ (on) and 960 µJ (off) under test conditions of 400 V, 50 A, 10 Ohm, and 15 V. The IGBT is housed in a TO-247N package suitable for through-hole mounting. This device is commonly utilized in power electronics for applications such as motor drives, power supplies, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 50A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 52ns/180ns |
| Switching Energy | 1.18mJ (on), 960µJ (off) |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Gate Charge | 141 nC |
| Current - Collector (Ic) (Max) | 96 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 254 W |
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