RGW00TS65DGC11
IGBT TRNCH FIELD 650V 96A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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The Rohm Semiconductor RGW00TS65DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a 650 V collector-emitter breakdown voltage and a maximum continuous collector current of 96 A (200 A pulsed). With a low on-state voltage (Vce(on)) of 1.9 V at 15 V gate-emitter voltage and 50 A collector current, it minimizes conduction losses. The device boasts rapid switching characteristics with typical turn-on delay (Td(on)) of 52 ns and turn-off delay (Td(off)) of 180 ns at 25°C, along with a reverse recovery time (trr) of 95 ns. It dissipates a maximum power of 254 W and operates within an extended temperature range of -40°C to 175°C. Packaged in a TO-247N (TO-247-3) through-hole configuration, the RGW00TS65DGC11 is suitable for power factor correction, uninterruptible power supplies (UPS), and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 95 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 50A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 52ns/180ns |
| Switching Energy | 1.18mJ (on), 960µJ (off) |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Gate Charge | 141 nC |
| Current - Collector (Ic) (Max) | 96 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 254 W |
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