RGTVX6TS65GC11
IGBT TRENCH FLD 650V 144A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor's RGTVX6TS65GC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT). This component features a collector-emitter voltage rating of 650 V and a continuous collector current capability of 144 A, with a pulsed current capability of 320 A. Designed for high-power applications, it dissipates a maximum power of 404 W. The IGBT exhibits a low on-state voltage (Vce(on)) of 1.9 V at 15 V gate-emitter voltage and 80 A collector current. Switching characteristics include a gate charge of 171 nC and switching energies of 2.65 mJ (on) and 1.8 mJ (off) under test conditions of 400 V, 80 A, 10 Ohm, and 15 V. The device operates across a temperature range of -40°C to 175°C (TJ) and is housed in a TO-247N package, suitable for through-hole mounting. This IGBT is widely utilized in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 80A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 45ns/201ns |
| Switching Energy | 2.65mJ (on), 1.8mJ (off) |
| Test Condition | 400V, 80A, 10Ohm, 15V |
| Gate Charge | 171 nC |
| Current - Collector (Ic) (Max) | 144 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 320 A |
| Power - Max | 404 W |
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