RGTVX6TS65DGC11
IGBT TRENCH FLD 650V 144A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor RGTVX6TS65DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 144 A, with a pulsed capability of 320 A. The device offers a maximum power dissipation of 404 W and a low on-state voltage of 1.9 V at 15 V gate-emitter voltage and 80 A collector current. Key switching characteristics include a gate charge of 171 nC and switching energies of 2.65 mJ (on) and 1.8 mJ (off) under test conditions of 400 V, 80 A, 10 Ohm, and 15 V. The RGTVX6TS65DGC11 is housed in a TO-247N package for through-hole mounting, operating across a temperature range of -40°C to 175°C. This IGBT is suitable for industrial power conversion, electric vehicle powertrains, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 109 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 80A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 45ns/201ns |
| Switching Energy | 2.65mJ (on), 1.8mJ (off) |
| Test Condition | 400V, 80A, 10Ohm, 15V |
| Gate Charge | 171 nC |
| Current - Collector (Ic) (Max) | 144 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 320 A |
| Power - Max | 404 W |
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