RGTVX2TS65GC11
IGBT TRENCH FLD 650V 111A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
Quality Control: Learn More
Rohm Semiconductor RGTVX2TS65GC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a collector-emitter breakdown voltage of 650 V and a continuous collector current rating of 111 A, with a pulsed capability of 240 A. The device exhibits a low on-state voltage of 1.9 V at 15 V gate-emitter voltage and 60 A collector current. With a maximum power dissipation of 319 W and typical switching times of 49 ns turn-on and 150 ns turn-off at 25°C, the RGTVX2TS65GC11 is suitable for demanding power conversion systems. It is packaged in a TO-247N through-hole package, operating within a temperature range of -40°C to 175°C. Key applications include industrial motor drives and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 60A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 49ns/150ns |
| Switching Energy | 2.08mJ (on), 1.15mJ (off) |
| Test Condition | 400V, 60A, 10Ohm, 15V |
| Gate Charge | 123 nC |
| Current - Collector (Ic) (Max) | 111 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 319 W |
Request a Quote
Clients Also Buy
RGTV00TS65DGC11
IGBT TRNCH FIELD 650V 95A TO247N
RGW40TS65DGC11
IGBT TRNCH FIELD 650V 40A TO247N
RGW50TK65GVC11
IGBT TRNCH FIELD 650V 30A TO3PFM
