RGTVX2TS65DGC11
IGBT TRENCH FS 650V 111A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor RGTVX2TS65DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a 650V collector-emitter breakdown voltage and a continuous collector current rating of 111A, with a pulsed capability of 240A. The RGTVX2TS65DGC11 offers a maximum power dissipation of 319W and an on-state voltage (Vce(on)) of 1.9V at 15V gate-emitter voltage and 60A collector current. Switching characteristics include typical turn-on delay (Td(on)) of 49ns and turn-off delay (Td(off)) of 150ns at 25°C, with corresponding switching energies of 2.08mJ (on) and 1.15mJ (off) under specified test conditions. The IGBT is packaged in a TO-247N through-hole configuration, suitable for demanding thermal management. This device finds application in industrial power supplies, motor drives, and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 60A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 49ns/150ns |
| Switching Energy | 2.08mJ (on), 1.15mJ (off) |
| Test Condition | 400V, 60A, 10Ohm, 15V |
| Gate Charge | 123 nC |
| Current - Collector (Ic) (Max) | 111 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 319 W |
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