RGTV80TS65GC11
IGBT TRNCH FIELD 650V 78A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor's RGTV80TS65GC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 78 A, with a pulsed capability up to 160 A. The RGTV80TS65GC11 offers low on-state voltage (Vce(on)) of 1.9 V at 15 V gate drive and 40 A collector current, coupled with optimized switching characteristics: 1.02 mJ turn-on energy and 710 µJ turn-off energy at 400 V, 40 A. With a maximum power dissipation of 234 W and an operating temperature range of -40°C to 175°C, this IGBT is suitable for demanding environments. The device is housed in a TO-247N package, facilitating through-hole mounting. This component is commonly utilized in power factor correction, motor control, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 40A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 39ns/113ns |
| Switching Energy | 1.02mJ (on), 710µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 81 nC |
| Current - Collector (Ic) (Max) | 78 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 234 W |
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