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RGTV80TS65DGC11

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RGTV80TS65DGC11

IGBT TRNCH FIELD 650V 78A TO247N

Manufacturer: Rohm Semiconductor

Categories: Single IGBTs

Quality Control: Learn More

Rohm Semiconductor RGTV80TS65DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 650 V and a maximum continuous collector current of 78 A, with a pulsed capability of 160 A. The device exhibits a low on-state voltage (Vce(on)) of 1.9 V at 15 V gate-emitter voltage and 40 A collector current, with a specified switching energy of 1.02 mJ turn-on and 710 µJ turn-off at 400 V, 40 A, 10 Ohm, 15 V. With a maximum power dissipation of 234 W and an operating temperature range of -40°C to 175°C, the RGTV80TS65DGC11 is suitable for demanding power electronics designs. It is supplied in a TO-247N package for through-hole mounting. This IGBT is utilized in industrial motor drives and power supplies.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)101 ns
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 40A
Supplier Device PackageTO-247N
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C39ns/113ns
Switching Energy1.02mJ (on), 710µJ (off)
Test Condition400V, 40A, 10Ohm, 15V
Gate Charge81 nC
Current - Collector (Ic) (Max)78 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)160 A
Power - Max234 W

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