RGTV60TS65GC11
IGBT TRNCH FIELD 650V 60A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor RGTV60TS65GC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current of 60 A, with a pulsed capability of 120 A. The RGTV60TS65GC11 offers a maximum power dissipation of 194 W and a low on-state voltage of 1.9 V at 15 V gate-emitter voltage and 30 A collector current. Switching characteristics include typical turn-on delay of 33 ns and turn-off delay of 105 ns at 25°C, with switching energies of 570 µJ (on) and 500 µJ (off) under the specified test conditions. The device is housed in a TO-247N package with through-hole mounting and operates within a temperature range of -40°C to 175°C. This IGBT is suitable for use in power conversion systems, motor drives, and renewable energy applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 30A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 33ns/105ns |
| Switching Energy | 570µJ (on), 500µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 64 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 194 W |
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