RGTV00TS65DGC11
IGBT TRNCH FIELD 650V 95A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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The Rohm Semiconductor RGTV00TS65DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, medium-current applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 95 A, with a pulsed capability of 200 A. It offers a low on-state voltage (Vce(on)) of 1.9 V at 15 V gate-emitter voltage and 50 A collector current. With a maximum power dissipation of 276 W and a junction temperature range of -40°C to 175°C, this IGBT is suitable for demanding power conversion systems. Key switching characteristics include a gate charge of 104 nC, a reverse recovery time of 102 ns, and switching energies of 1.17 mJ (on) and 940 µJ (off) under specified test conditions. The device is presented in a TO-247N package for through-hole mounting. This component finds application in industrial power supplies, motor drives, and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 102 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 50A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 41ns/142ns |
| Switching Energy | 1.17mJ (on), 940µJ (off) |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Gate Charge | 104 nC |
| Current - Collector (Ic) (Max) | 95 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 276 W |
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