RGTH80TS65GC11
IGBT TRNCH FIELD 650V 70A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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The Rohm Semiconductor RGTH80TS65GC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a 650V collector-emitter breakdown voltage and a continuous collector current rating of 70A, with a pulsed capability of 160A. Its low on-state voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 40A collector current, combined with typical switching times of 34ns turn-on and 120ns turn-off at 25°C (under test conditions of 400V, 40A, 10 Ohm, 15V), ensures efficient power conversion. The device dissipates a maximum of 234W and operates within an extended temperature range of -40°C to 175°C (TJ). Packaged in a TO-247N (TO-247-3) through-hole format, the RGTH80TS65GC11 is suitable for demanding applications in power supplies, motor drives, and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 40A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 34ns/120ns |
| Switching Energy | - |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 79 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 234 W |
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