RGTH80TS65DGC11
IGBT TRNCH FIELD 650V 70A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
Quality Control: Learn More
The Rohm Semiconductor RGTH80TS65DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a collector-emitter breakdown voltage of 650 V and a continuous collector current rating of 70 A, with a pulsed capability up to 160 A. The RGTH80TS65DGC11 offers a maximum power dissipation of 234 W and exhibits a low on-state voltage (Vce(on)) of 2.1 V at 15 V gate-emitter voltage and 40 A collector current. Gate charge is specified at 79 nC, with typical turn-on and turn-off delays of 34 ns and 120 ns respectively at 25°C under test conditions of 400 V, 40 A, 10 Ohm, and 15 V. The device operates within an extended temperature range of -40°C to 175°C. Packaged in a TO-247N (TO-247-3) through-hole package, this IGBT is suitable for power conversion systems in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 58 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 40A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 34ns/120ns |
| Switching Energy | - |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 79 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 234 W |
Request a Quote
Clients Also Buy
RGW40TS65DGC11
IGBT TRNCH FIELD 650V 40A TO247N
RGW50TK65GVC11
IGBT TRNCH FIELD 650V 30A TO3PFM
RGTH50TK65GC11
IGBT TRNCH FIELD 650V 26A TO3PFM
