RGTH60TS65GC11
IGBT TRNCH FIELD 650V 58A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor's RGTH60TS65GC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This component offers a collector-emitter voltage rating of 650 V and a continuous collector current of 58 A, with a pulsed capability of 120 A. It features a low on-state voltage (Vce(on)) of 2.1 V at 15 V gate-emitter voltage and 30 A collector current, ensuring efficient operation. The device has a maximum power dissipation of 197 W and a typical gate charge of 58 nC. Operating across a temperature range of -40°C to 175°C, the RGTH60TS65GC11 is packaged in a TO-247N through-hole configuration, suitable for demanding thermal management. Typical switching characteristics at 400 V, 30 A, and 15 V gate drive show a turn-on delay of 27 ns and a turn-off delay of 105 ns. This IGBT is commonly utilized in industrial power supplies, motor control, and energy conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 27ns/105ns |
| Switching Energy | - |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 58 nC |
| Current - Collector (Ic) (Max) | 58 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 197 W |
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