RGTH50TS65GC11
IGBT TRNCH FIELD 650V 50A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor RGTH50TS65GC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 50 A, with a pulsed capability of 100 A. The RGTH50TS65GC11 offers a low on-state voltage (Vce(on)) of 2.1 V at 15 V gate-emitter voltage and 25 A collector current, contributing to reduced conduction losses. With a maximum power dissipation of 174 W and a typical gate charge of 49 nC, it is suitable for demanding applications. The TO-247N package facilitates through-hole mounting for robust thermal management. This IGBT is commonly utilized in industrial motor drives, power supplies, and renewable energy systems where reliability and performance are critical. Typical switching characteristics at 400 V, 25 A, and 10 Ohm load include turn-on time of 27 ns and turn-off time of 94 ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 25A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 27ns/94ns |
| Switching Energy | - |
| Test Condition | 400V, 25A, 10Ohm, 15V |
| Gate Charge | 49 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 174 W |
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