RGTH50TS65DGC11
IGBT TRNCH FIELD 650V 50A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor's RGTH50TS65DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 50 A, with a pulsed capability of 100 A. The device exhibits a low on-state voltage (Vce(on)) of 2.1 V at 15 V gate-emitter voltage and 25 A collector current. Key switching characteristics include a gate charge of 49 nC, with turn-on and turn-off delays of 27 ns and 94 ns respectively at 25°C under specified test conditions. The RGTH50TS65DGC11 has a maximum power dissipation of 174 W and operates within an ambient temperature range of -40°C to 175°C. Packaged in a TO-247N (TO-247-3) through-hole configuration, this IGBT is suitable for power factor correction circuits and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 58 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 25A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 27ns/94ns |
| Switching Energy | - |
| Test Condition | 400V, 25A, 10Ohm, 15V |
| Gate Charge | 49 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 174 W |
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