RGTH40TS65GC11
IGBT TRNCH FIELD 650V 40A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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The Rohm Semiconductor RGTH40TS65GC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 40 A, with a pulsed capability of 80 A. The RGTH40TS65GC11 exhibits a maximum on-state voltage (Vce(on)) of 2.1 V at 15 V gate-emitter voltage and 20 A collector current. Typical switching times are 22 ns turn-on and 73 ns turn-off at 25°C, with a gate charge of 40 nC. With a maximum power dissipation of 144 W, this IGBT operates within a temperature range of -40°C to 175°C (TJ). It is supplied in a TO-247N package for through-hole mounting. This device is suitable for use in power supply, industrial motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 20A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 22ns/73ns |
| Switching Energy | - |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Gate Charge | 40 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 144 W |
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