RGTH40TS65DGC11
IGBT TRNCH FIELD 650V 40A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor RGTH40TS65DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This through-hole component features a collector-emitter breakdown voltage of 650 V and a continuous collector current (Ic) rating of 40 A, with a pulsed collector current (Icm) of 80 A. The RGTH40TS65DGC11 offers a maximum power dissipation of 144 W and a low on-state voltage (Vce(on)) of 2.1 V at 15 V gate-emitter voltage and 20 A collector current. Typical turn-on delay (Td(on)) is 22 ns, and turn-off delay (Td(off)) is 73 ns at 25°C. The device operates within a temperature range of -40°C to 175°C (TJ). The RGTH40TS65DGC11 is packaged in a TO-247N (TO-247-3) through-hole package. This component is commonly utilized in power supply, industrial motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 58 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 20A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 22ns/73ns |
| Switching Energy | - |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Gate Charge | 40 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 144 W |
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