RGTH00TS65GC11
IGBT TRNCH FIELD 650V 85A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor RGTH00TS65GC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 85 A, with a pulsed capability of 200 A. The RGTH00TS65GC11 offers a low on-state voltage (Vce(on)) of 2.1 V at 15 V gate-emitter voltage and 50 A collector current, alongside a maximum power dissipation of 277 W. Typical switching characteristics include a turn-on delay (Td(on)) of 39 ns and a turn-off delay (Td(off)) of 143 ns at 25°C, under a test condition of 400 V, 50 A, 10 Ohm, and 15 V. The device has a gate charge of 94 nC. This IGBT is housed in a TO-247N package, facilitating through-hole mounting. The operating temperature range is -40°C to 175°C (TJ). Applications for this component include power supplies, motor control, and industrial power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 39ns/143ns |
| Switching Energy | - |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Gate Charge | 94 nC |
| Current - Collector (Ic) (Max) | 85 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 277 W |
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