RGTH00TS65DGC11
IGBT TRNCH FIELD 650V 85A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor RGTH00TS65DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current of 85 A, further specified with a pulsed collector current of 200 A. The device exhibits a maximum on-state voltage (Vce(on)) of 2.1 V at 15 V gate-emitter voltage and 50 A collector current. Key switching characteristics include a gate charge of 94 nC and turn-on/turn-off delays of 39 ns/143 ns at 25°C, with a reverse recovery time (trr) of 54 ns, tested under 400 V, 50 A, 10 Ohm, and 15 V conditions. The RGTH00TS65DGC11 dissipates up to 277 W and operates within an industrial temperature range of -40°C to 175°C. It is housed in a TO-247N package, suitable for through-hole mounting. This IGBT is utilized in power factor correction, motor drives, and inverters across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 54 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 39ns/143ns |
| Switching Energy | - |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Gate Charge | 94 nC |
| Current - Collector (Ic) (Max) | 85 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 277 W |
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