RGT8BM65DTL
IGBT TRENCH FIELD 650V 8A TO252Manufacturer: Rohm Semiconductor
Categories: Single IGBTs
Quality Control: Learn More
Rohm Semiconductor RGT8BM65DTL is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component offers a 650 V collector-emitter breakdown voltage and a continuous collector current capability of 8 A, with a pulsed current capability of 12 A. The RGT8BM65DTL features a low on-state voltage of 2.1 V at 4 A and 15 V gate drive, and a typical turn-on delay of 17 ns, making it suitable for demanding switching applications. It is packaged in a TO-252-3, DPAK surface-mount configuration and operates within an extended temperature range of -40°C to 175°C. The RGT8BM65DTL is commonly utilized in power factor correction (PFC) circuits, switch mode power supplies (SMPS), and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 40 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 4A |
| Supplier Device Package | TO-252 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 17ns/69ns |
| Switching Energy | - |
| Test Condition | 400V, 4A, 50Ohm, 15V |
| Gate Charge | 13.5 nC |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 12 A |
| Power - Max | 62 W |
Request a Quote
Clients Also Buy
RGTV00TS65DGC11
IGBT TRNCH FIELD 650V 95A TO247N
RGW40NL65DHRBTL
IGBT TRENCH FS 650V 48A TO263L
RGT40TM65DGC9
IGBT TRNCH FLD 650V 17A TO220NFM
