RGT80TS65DGC11
IGBT 650V 70A 234W TO-247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor RGT80TS65DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 70 A at a maximum power dissipation of 234 W. The IGBT type utilizes Trench Field Stop technology for enhanced performance and efficiency. Key electrical characteristics include a 2.1 V saturation voltage at 15 V gate-emitter voltage and 40 A collector current, with a 70 nC gate charge. Switching characteristics are specified with turn-on and turn-off delays of 34 ns and 119 ns respectively at 25°C, under a 400 V, 40 A, 10 Ohm, 15 V test condition, and a reverse recovery time of 58 ns. Operating temperature ranges from -40°C to 175°C. The component is housed in a TO-247N package for through-hole mounting. This IGBT is suitable for use in industrial automation, power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 58 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 40A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 34ns/119ns |
| Switching Energy | - |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 79 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 234 W |
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