RGT60TS65DGC11
IGBT TRNCH FIELD 650V 55A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor RGT60TS65DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a collector-emitter breakdown voltage of 650 V and a continuous collector current rating of 55 A, with a pulsed current capability of 90 A. The RGT60TS65DGC11 offers a low on-state voltage (Vce(on)) of 2.1 V at 15 V gate-emitter voltage and 30 A collector current, and a typical gate charge of 58 nC. It operates within an extended temperature range of -40°C to 175°C. With a maximum power dissipation of 194 W and a reverse recovery time of 58 ns, this IGBT is suitable for demanding applications in power conversion, motor control, and industrial power systems. The device is provided in a TO-247N package for through-hole mounting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 58 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 29ns/100ns |
| Switching Energy | - |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 58 nC |
| Current - Collector (Ic) (Max) | 55 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 194 W |
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