RGT50TS65DGC11
IGBT TRNCH FIELD 650V 48A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor RGT50TS65DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT). This component features a 650 V collector-emitter breakdown voltage and a continuous collector current of 48 A, with a pulsed capability of 75 A. The IGBT exhibits a low on-state voltage (Vce(on)) of 2.1 V at 15 V gate-emitter voltage and 25 A collector current, with typical turn-on and turn-off delays of 27 ns and 88 ns respectively at 25°C. Its maximum power dissipation is 174 W, and it operates across a temperature range of -40°C to 175°C. The RGT50TS65DGC11 is supplied in a TO-247N package for through-hole mounting and is suitable for applications in power conversion, industrial motor control, and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 58 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 25A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 27ns/88ns |
| Switching Energy | - |
| Test Condition | 400V, 25A, 10Ohm, 15V |
| Gate Charge | 49 nC |
| Current - Collector (Ic) (Max) | 48 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 75 A |
| Power - Max | 174 W |
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