RGT40TS65DGC11
IGBT 650V 40A 144W TO-247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor RGT40TS65DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a collector-emitter breakdown voltage of 650 V and a continuous collector current (Ic) rating of 40 A, with a pulsed collector current (Icm) capability of 60 A. The IGBT Type is Trench Field Stop, offering optimized switching characteristics with typical turn-on delay (Td(on)) of 22 ns and turn-off delay (Td(off)) of 75 ns at 25°C, under a test condition of 400V, 20A, 10Ohm, 15V. The saturation voltage (Vce(on)) is a maximum of 2.1V at 15V gate-emitter voltage and 20A collector current. With a maximum power dissipation of 144 W and an operating temperature range of -40°C to 175°C (TJ), the RGT40TS65DGC11 is suitable for demanding industrial sectors such as power supplies and motor drives. It is provided in a TO-247N package, facilitating through-hole mounting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 58 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 20A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 22ns/75ns |
| Switching Energy | - |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Gate Charge | 40 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 144 W |
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