RGT00TS65DGC11
650V 50A FIELD STOP TRENCH IGBTManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor's RGT00TS65DGC11 is a Trench Field Stop IGBT designed for high-voltage applications. This through-hole component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 85 A, with a pulsed capability of 150 A. The device dissipates a maximum power of 277 W and operates across an extended temperature range of -40°C to 175°C. Its on-state voltage (Vce(on)) is 2.1V at 15V gate-emitter voltage and 50A collector current, with typical turn-on and turn-off delays of 42 ns and 137 ns respectively. The reverse recovery time (trr) is specified at 54 ns. Packaged in a TO-247N, this IGBT is suitable for power conversion systems in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 54 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 42ns/137ns |
| Switching Energy | - |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Gate Charge | 94 nC |
| Current - Collector (Ic) (Max) | 85 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 277 W |
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