RGCL80TS60DGC11
IGBT TRNCH FIELD 600V 65A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor RGCL80TS60DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 65 A, with a pulsed current rating of 160 A. The RGCL80TS60DGC11 offers a low on-state voltage (Vce(on)) of 1.8 V at 15 V gate-emitter voltage and 40 A collector current, contributing to reduced conduction losses. With a maximum power dissipation of 148 W and switching energies of 1.11 mJ (on) and 1.68 mJ (off) under specified test conditions, this IGBT is suitable for demanding power conversion circuits. The device is housed in a TO-247N package, facilitating through-hole mounting. Its operating temperature range is -40°C to 175°C (TJ). Industries utilizing this component include industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 58 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 40A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 53ns/227ns |
| Switching Energy | 1.11mJ (on), 1.68mJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 98 nC |
| Current - Collector (Ic) (Max) | 65 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 148 W |
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