RGCL60TS60GC11
IGBT TRNCH FIELD 600V 48A TO247NManufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor RGCL60TS60GC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 48A (120A pulsed). The device exhibits a low on-state voltage of 1.8V at 15V gate-emitter voltage and 30A collector current, with a maximum power dissipation of 111W. Key switching characteristics include a gate charge of 68 nC and switching energies of 770µJ (on) and 1.11mJ (off) under test conditions of 400V, 30A, 10 Ohm, and 15V. The RGCL60TS60GC11 utilizes a Trench Field Stop IGBT architecture for optimized performance and is supplied in a TO-247N package for through-hole mounting. Operating temperature range is -40°C to 175°C (TJ). This component is commonly found in power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 30A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 44ns/186ns |
| Switching Energy | 770µJ (on), 1.11mJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 68 nC |
| Current - Collector (Ic) (Max) | 48 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 111 W |
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