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RGCL60TS60DGC11

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RGCL60TS60DGC11

IGBT TRNCH FIELD 600V 48A TO247N

Manufacturer: Rohm Semiconductor

Categories: Single IGBTs

Quality Control: Learn More

Rohm Semiconductor RGCL60TS60DGC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 48 A, with a pulsed capability of up to 120 A. The device exhibits a low on-state voltage (Vce(on)) of 1.8 V at 15 V gate-emitter voltage and 30 A collector current, contributing to reduced conduction losses. Switching performance is characterized by typical turn-on delay (Td(on)) of 44 ns and turn-off delay (Td(off)) of 186 ns at 25°C, with a reverse recovery time (trr) of 58 ns. With a maximum power dissipation of 111 W and a high operating temperature range of -40°C to 175°C (TJ), the RGCL60TS60DGC11 is well-suited for demanding power conversion systems, including industrial motor control, power supplies, and renewable energy inverters. Packaged in a TO-247N, this device supports through-hole mounting.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)58 ns
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 30A
Supplier Device PackageTO-247N
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C44ns/186ns
Switching Energy770µJ (on), 1.11mJ (off)
Test Condition400V, 30A, 10Ohm, 15V
Gate Charge68 nC
Current - Collector (Ic) (Max)48 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)120 A
Power - Max111 W

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