RGA80TSX2HRC11
10 SHORT-CIRCUIT TOLERANCE, 1200Manufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor RGA80TSX2HRC11 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 105 A (120 A pulsed). With a maximum power dissipation of 468 W, the RGA80TSX2HRC11 offers robust performance in demanding environments. Its trench field stop technology contributes to excellent switching characteristics, with typical on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 40A collector current. Switching energy is specified at 2.58mJ (on) and 3.31mJ (off) under test conditions of 800V, 40A, 10 Ohm, and 15V. The device operates across a temperature range of -40°C to 175°C and is packaged in a TO-247N through-hole configuration. Qualified to AEC-Q101, this IGBT is suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 94ns/344ns |
| Switching Energy | 2.58mJ (on), 3.31mJ (off) |
| Test Condition | 800V, 40A, 10Ohm, 15V |
| Gate Charge | 259 nC |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 105 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 468 W |
| Qualification | AEC-Q101 |
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