RGA80TSX2EHRC11
10 SHORT-CIRCUIT TOLERANCE, 1200Manufacturer: Rohm Semiconductor
Categories: Single IGBTs
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Rohm Semiconductor RGA80TSX2EHRC11 is a Trench Field Stop IGBT designed for high-voltage applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 105 A, with a pulsed current capability of 120 A. It offers a maximum power dissipation of 468 W. The RGA80TSX2EHRC11 operates within an extended temperature range of -40°C to 175°C and is qualified to AEC-Q101 standards, making it suitable for automotive and industrial power systems. Key performance parameters include a gate charge of 259 nC and switching energy levels of 3.85 mJ (on) and 3.31 mJ (off) at 800V, 40A, 10 Ohm, 15V. The on-state voltage drop (Vce(on)) is a maximum of 2V at 15V gate-source voltage and 40A collector current. This device is provided in a TO-247N (TO-247-3) through-hole package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 372 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
| Supplier Device Package | TO-247N |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 94ns/344ns |
| Switching Energy | 3.85mJ (on), 3.31mJ (off) |
| Test Condition | 800V, 40A, 10Ohm, 15V |
| Gate Charge | 259 nC |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 105 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 468 W |
| Qualification | AEC-Q101 |
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