ZDX080N50
MOSFET N-CH 500V 8A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor ZDX080N50 is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 8A at 25°C. The Rds On is specified at a maximum of 850mOhm at 4A and 10V gate drive. With a total power dissipation of 40W at 25°C (Tc), it is suitable for demanding power management tasks. The ZDX080N50 utilizes MOSFET technology and is housed in a TO-220FM package for through-hole mounting. Key parameters include a gate charge (Qg) of 23 nC at 10V and input capacitance (Ciss) of 1120 pF at 25V. This device operates at a maximum junction temperature of 150°C. It finds application in power supplies, industrial automation, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1120 pF @ 25 V |
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