ZDS020N60TB
MOSFET N-CH 600V 630MA 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's ZDS020N60TB is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 630mA at 25°C. With a maximum On-Resistance (Rds On) of 5 Ohms at 500mA and 10V, it offers efficient power handling. The device is packaged in an 8-SOP (Surface Mount) configuration, suitable for automated assembly. Key parameters include a Gate Charge (Qg) of 20nC at 10V and Input Capacitance (Ciss) of 310pF at 10V. The maximum power dissipation is 2W (Tc), and it operates at an ambient temperature up to 150°C. This MOSFET is utilized in power supply units, lighting controls, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 630mA (Tc) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 10 V |
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