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US6U37TR

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US6U37TR

MOSFET N-CH 30V 1.5A TUMT6

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Rohm Semiconductor US6U37TR is a N-Channel MOSFET designed for surface mount applications. This device features a 30 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 1.5 A at 25°C. The Rds On is specified at a maximum of 240 mOhm at 1.5 A and 4.5 V gate-source voltage. Key characteristics include a gate charge (Qg) of 2.2 nC maximum at 4.5 V and input capacitance (Ciss) of 80 pF maximum at 10 V. The TUMT6 package offers a 700 mW power dissipation at 25°C. This component is suitable for use in automotive and industrial applications. It operates at temperatures up to 150°C (TJ) and is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-SMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Rds On (Max) @ Id, Vgs240mOhm @ 1.5A, 4.5V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 1mA
Supplier Device PackageTUMT6
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds80 pF @ 10 V

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