US5U29TR
MOSFET P-CH 20V 1A TUMT5Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor P-Channel MOSFET, part number US5U29TR, is designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 1A at 25°C, with a maximum power dissipation of 1W. The ON-resistance (Rds On) is specified at 390mOhm maximum at 1A and 4.5V Vgs. Key characteristics include a Gate Charge (Qg) of 2.1 nC maximum at 5V and an Input Capacitance (Ciss) of 150 pF maximum at 10V. The MOSFET incorporates an isolated Schottky diode. Operating at junction temperatures up to 150°C, the US5U29TR is housed in a TUMT5 package, a 6-SMD (5 leads) with flat leads, supplied in Tape & Reel (TR) packaging. This component is suitable for use in automotive and industrial electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD (5 Leads), Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 1A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TUMT5 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 10 V |
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