TT8U2TR
MOSFET P-CH 20V 2.4A 8TSSTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor P-Channel MOSFET, TT8U2TR, features a 20V drain-to-source voltage and 2.4A continuous drain current. This surface mount device, packaged in an 8-TSST, offers a maximum on-resistance of 105mOhm at 2.4A and 4.5V Vgs. The MOSFET incorporates an isolated Schottky diode, enhancing its functionality. Key parameters include a gate charge of 6.7 nC and input capacitance of 850 pF at 10V Vds. With a maximum operating junction temperature of 150°C and a power dissipation of 1.25W (Ta), this component is suitable for applications in consumer electronics, industrial automation, and power management systems. The device supports drive voltages from 1.5V to 4.5V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 2.4A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 8-TSST |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 10 V |
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