TT8U1TR
MOSFET P-CH 20V 2.4A 8TSSTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor TT8U1TR is a P-Channel MOSFET designed for robust switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 2.4A at 25°C. The Rds On is specified at a maximum of 105mOhm at 2.4A and 4.5V Vgs. It operates with a gate-source voltage (Vgs) range up to ±10V, with a threshold voltage (Vgs(th)) of 1V at 1mA. The device includes an integrated Schottky diode, offering isolation. With a maximum power dissipation of 1.25W (Ta), the TT8U1TR is suitable for surface mount integration in the 8-TSST package. Typical applications include power management and control circuits in automotive and industrial electronics. Gate charge (Qg) is 6.7 nC at 4.5V, and input capacitance (Ciss) is 850 pF at 10V. The operating temperature range extends to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 2.4A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 8-TSST |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 10 V |
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