SCT4062KW7TL
1200V, 24A, 7-PIN SMD, TRENCH-STManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor's SCT4062KW7TL is a 1200V N-Channel Silicon Carbide (SiC) FET. This TO-263-7L surface mount device offers a continuous drain current of 24A (Tj) with a maximum power dissipation of 93W. Key parameters include a low on-resistance of 81mOhm @ 12A, 18V, and a gate charge of 64 nC @ 18V. The input capacitance (Ciss) is 1498 pF @ 800V. This component is suitable for high-voltage applications and operates at junction temperatures up to 175°C. Its robust SiC technology makes it ideal for demanding power conversion systems in industries such as industrial power supplies, electric vehicle charging, and renewable energy.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tj) |
| Rds On (Max) @ Id, Vgs | 81mOhm @ 12A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 93W |
| Vgs(th) (Max) @ Id | 4.8V @ 6.45mA |
| Supplier Device Package | TO-263-7L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1498 pF @ 800 V |
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