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SCT4062KW7HRTL

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SCT4062KW7HRTL

1200V, 24A, 7-PIN SMD, TRENCH-ST

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor's SCT4062KW7HRTL is a 1200V, 24A N-Channel SiCFET designed for high-performance applications. This device features a low on-resistance of 81mOhm at 12A and 18V, coupled with a maximum continuous drain current of 24A (Tc). The SCT4062KW7HRTL boasts a high junction temperature rating of 175°C and a maximum power dissipation of 93W, making it suitable for demanding thermal environments. Its TO-263-7L (D2PAK) surface mount package ensures efficient heat transfer. Key parameters include a gate charge (Qg) of 64 nC at 18V and input capacitance (Ciss) of 1498 pF at 800V. This component is AEC-Q101 qualified, indicating its suitability for automotive applications. The maximum gate-source voltage is +21V, and the threshold voltage (Vgs(th)) is 4.8V at 6.45mA.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Rds On (Max) @ Id, Vgs81mOhm @ 12A, 18V
FET Feature-
Power Dissipation (Max)93W
Vgs(th) (Max) @ Id4.8V @ 6.45mA
Supplier Device PackageTO-263-7L
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)+21V, -4V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds1498 pF @ 800 V
QualificationAEC-Q101

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