SCT4062KRHRC15
1200V, 26A, 4-PIN THD, TRENCH-STManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor SCT4062KRHRC15 is a 1200V N-Channel Silicon Carbide (SiC) MOSFET with a continuous drain current of 26A at 25°C (Tc). This through-hole component, packaged in a TO-247-4L, features a low on-resistance of 81mOhm at 12A and 18V. The gate charge is 64 nC at 18V, with input capacitance (Ciss) at 1498 pF @ 800 V. It operates at a maximum junction temperature of 175°C and has a maximum power dissipation of 115W. The SCT4062KRHRC15 is AEC-Q101 qualified, making it suitable for automotive applications. The device supports gate-source voltages up to +21V and down to -4V, with a threshold voltage (Vgs(th)) of 4.8V at 6.45mA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 81mOhm @ 12A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 115W |
| Vgs(th) (Max) @ Id | 4.8V @ 6.45mA |
| Supplier Device Package | TO-247-4L |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1498 pF @ 800 V |
| Qualification | AEC-Q101 |
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