SCT4062KRC15
1200V, 62M, 4-PIN THD, TRENCH-STManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
This Rohm Semiconductor N-Channel SiCFET, part number SCT4062KRC15, offers exceptional performance with a 1200V drain-source voltage and a continuous drain current of 26A at 25°C. Featuring a low on-resistance of 81mOhm at 12A and 18V, this device is designed for high-efficiency power conversion. The TO-247-4L through-hole package ensures robust thermal management with a maximum power dissipation of 115W and an operating junction temperature of 175°C. Key parameters include a gate charge of 64 nC at 18V and input capacitance of 1498 pF at 800V. This component is suitable for applications in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 81mOhm @ 12A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 115W |
| Vgs(th) (Max) @ Id | 4.8V @ 6.45mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1498 pF @ 800 V |
Request a Quote
Clients Also Buy
R5009ANX
MOSFET N-CH 500V 9A TO220
RS1E240BNTB
MOSFET N-CH 30V 24A 8HSOP
SCT4045DRC15
750V, 45M, 4-PIN THD, TRENCH-STR
