SCT4062KEHRC11
1200V, 26A, 3-PIN THD, TRENCH-STManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SCT4062KEHRC11 is a 1200V N-Channel SiCFET (Silicon Carbide Field-Effect Transistor) designed for high-performance applications. This component features a maximum continuous drain current of 26A (Tc) and a low on-resistance of 81mOhm @ 12A, 18V. The device offers a gate charge (Qg) of 64 nC @ 18 V and input capacitance (Ciss) of 1498 pF @ 800 V. With a maximum power dissipation of 115W and an operating junction temperature of 175°C, it is built for demanding environments. The SCT4062KEHRC11 is housed in a TO-247-3 package, suitable for through-hole mounting, and meets AEC-Q101 qualification, making it ideal for automotive and industrial power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 81mOhm @ 12A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 115W |
| Vgs(th) (Max) @ Id | 4.8V @ 6.45mA |
| Supplier Device Package | TO-247N |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1498 pF @ 800 V |
| Qualification | AEC-Q101 |
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