SCT4045DW7TL
750V, 31A, 7-PIN SMD, TRENCH-STRManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor presents the SCT4045DW7TL, a high-performance N-Channel SiCFET. This component boasts a Drain-to-Source Voltage (Vdss) of 750V and a continuous drain current (Id) of 31A at 25°C. The device features a low on-resistance (Rds On) of 59mOhm at 17A and 18V, with a gate charge (Qg) of 63 nC at 18V. Designed for demanding applications, it offers a maximum power dissipation of 93W and an operating junction temperature up to 175°C. The SCT4045DW7TL is packaged in a TO-263-7L surface mount configuration, suitable for high-density board layouts. Key electrical characteristics include an input capacitance (Ciss) of 1460 pF at 500V and a gate-source voltage (Vgs) range of +21V to -4V. This SiCFET technology is widely utilized in power conversion systems, electric vehicle powertrains, and industrial motor control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tj) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 17A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 93W |
| Vgs(th) (Max) @ Id | 4.8V @ 8.89mA |
| Supplier Device Package | TO-263-7L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 500 V |
Request a Quote
Clients Also Buy
R5009ANX
MOSFET N-CH 500V 9A TO220
RS1E240BNTB
MOSFET N-CH 30V 24A 8HSOP
SCT4045DRC15
750V, 45M, 4-PIN THD, TRENCH-STR
