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SCT4045DW7HRTL

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SCT4045DW7HRTL

750V, 31A, 7-PIN SMD, TRENCH-STR

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Rohm Semiconductor SCT4045DW7HRTL is a high-performance N-Channel Silicon Carbide MOSFET. This device features a drain-source voltage (Vdss) of 750 V and a continuous drain current (Id) of 31 A at 25°C (Tc). It offers a low on-resistance (Rds On) of 59 mOhm maximum at 17 A and 18 V gate drive. The TO-263-7L package facilitates surface mounting, and the component is rated for a maximum junction temperature of 175°C, with a maximum power dissipation of 93 W. Key parameters include a gate charge (Qg) of 63 nC at 18 V and input capacitance (Ciss) of 1460 pF at 500 V. This AEC-Q101 qualified component is suitable for demanding applications in the automotive sector.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Rds On (Max) @ Id, Vgs59mOhm @ 17A, 18V
FET Feature-
Power Dissipation (Max)93W
Vgs(th) (Max) @ Id4.8V @ 8.89mA
Supplier Device PackageTO-263-7L
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)+21V, -4V
Drain to Source Voltage (Vdss)750 V
Gate Charge (Qg) (Max) @ Vgs63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds1460 pF @ 500 V
QualificationAEC-Q101

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