SCT4045DRC15
750V, 45M, 4-PIN THD, TRENCH-STRManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Rohm Semiconductor SCT4045DRC15 is an N-Channel Silicon Carbide FET with a Drain-Source Voltage (Vdss) of 750 V and a continuous drain current of 34 A (Tc). This through-hole component, housed in a TO-247-4L package, offers a maximum power dissipation of 115W. Key electrical characteristics include a low on-resistance (Rds On) of 59 mOhm at 17A, 18V, and a gate charge (Qg) of 63 nC at 18V. Input capacitance (Ciss) is rated at 1460 pF at 500 V. Operating at junction temperatures up to 175°C, this device is suitable for demanding applications in power conversion, electric vehicle powertrains, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 17A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 115W |
| Vgs(th) (Max) @ Id | 4.8V @ 8.89mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 500 V |
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