SCT4045DEC11
750V, 45M, 3-PIN THD, TRENCH-STRManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor SCT4045DEC11 is a 750V N-Channel Silicon Carbide (SiC) FET. This through-hole component, housed in a TO-247-3 package, offers a continuous drain current of 34A (Tc) and a maximum power dissipation of 115W. The device features a low on-resistance of 59mOhm at 17A and 18V, with a gate charge of 63 nC at 18V. Its high operating temperature of 175°C (TJ) and 750V drain-to-source voltage make it suitable for demanding applications in power conversion, electric vehicles, and industrial motor control. The SCT4045DEC11 utilizes SiCFET technology for enhanced performance and efficiency.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 17A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 115W |
| Vgs(th) (Max) @ Id | 4.8V @ 8.89mA |
| Supplier Device Package | TO-247N |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14600 pF @ 500 V |
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