SCT4036KRHRC15
1200V, 43A, 4-PIN THD, TRENCH-STManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor's SCT4036KRHRC15 is a high-performance N-Channel Silicon Carbide (SiC) FET. This component features a robust 1200 V drain-source voltage (Vdss) and a continuous drain current (Id) of 43 A at 25°C (Tc). With a low on-resistance (Rds On) of 47 mOhm at 21 A and 18 V, it delivers efficient power switching. The device boasts a high maximum junction temperature of 175°C and a maximum power dissipation of 176 W, supported by its TO-247-4L through-hole package. Key parameters include a gate charge (Qg) of 91 nC at 18 V and input capacitance (Ciss) of 2335 pF at 800 V. Qualified to AEC-Q101 standards, this SiCFET is suitable for demanding applications in the automotive industry.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 21A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 176W |
| Vgs(th) (Max) @ Id | 4.8V @ 11.1mA |
| Supplier Device Package | TO-247-4L |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2335 pF @ 800 V |
| Qualification | AEC-Q101 |
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