SCT4036KEHRC11
1200V, 43A, 3-PIN THD, TRENCH-STManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor's SCT4036KEHRC11 is a high-performance N-Channel Silicon Carbide FET designed for demanding applications. This TO-247-3 package component offers a robust 1200V drain-to-source voltage and a continuous drain current of 43A at 25°C (Tc). Featuring a low Rds(on) of 47mOhm at 21A and 18V, it ensures efficient power handling with a maximum power dissipation of 176W. The device operates reliably up to 175°C (TJ) and is qualified to AEC-Q101 standards, making it suitable for automotive and industrial power systems. Key parameters include a gate charge of 91 nC (max) at 18V and input capacitance of 2335 pF (max) at 800V, with a gate-source voltage range of +21V to -4V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 21A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 176W |
| Vgs(th) (Max) @ Id | 4.8V @ 11.1mA |
| Supplier Device Package | TO-247N |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2335 pF @ 800 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
RQ7G080BGTCR
NCH 40V 8A, TSMT8, POWER MOSFET
RTQ045N03TR
MOSFET N-CH 30V 4.5A TSMT6
R6025JNZC17
MOSFET N-CH 600V 25A TO3PF
