SCT4036KEC11
1200V, 36M, 3-PIN THD, TRENCH-STManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Rohm Semiconductor SCT4036KEC11 is a high-performance N-Channel SiCFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 43A at 25°C (Tc), with a maximum power dissipation of 176W. The device exhibits a low on-resistance (Rds On) of 47mOhm at 21A and 18V, facilitated by its Trench-ST technology. Key parameters include a gate charge (Qg) of 91 nC at 18V and input capacitance (Ciss) of 2335 pF at 800V. Operating at temperatures up to 175°C (TJ), the SCT4036KEC11 is packaged in a TO-247-3 through-hole configuration. This component is suitable for use in high-voltage power conversion, electric vehicle charging, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 21A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 176W |
| Vgs(th) (Max) @ Id | 4.8V @ 11.1mA |
| Supplier Device Package | TO-247N |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2335 pF @ 800 V |
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