SCT4026DW7TL
750V, 51A, 7-PIN SMD, TRENCH-STRManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor's SCT4026DW7TL is a high-performance N-Channel SiCFET designed for demanding power applications. This component offers a 750V drain-source voltage rating and a continuous drain current capability of 51A at 25°C (Tj), with a maximum power dissipation of 150W. The trench-structure technology enables a low on-resistance of 34mOhm at 29A and 18V. Key parameters include a gate charge of 94 nC @ 18V and input capacitance of 2320 pF @ 500V. It features a TO-263-7L surface mount package, suitable for high-density board designs. Operating temperature range extends up to 175°C (TJ). This device finds application in various sectors including industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tj) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 29A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 150W |
| Vgs(th) (Max) @ Id | 4.8V @ 15.4mA |
| Supplier Device Package | TO-263-7L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2320 pF @ 500 V |
Request a Quote
Clients Also Buy
RQ7G080BGTCR
NCH 40V 8A, TSMT8, POWER MOSFET
QS6U22TR
MOSFET P-CH 20V 1.5A TSMT6
R6020YNXC7G
600V 12A TO-220FM, FAST SWITCHIN
